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| BFP 93A NPN Silicon RF Transistor * For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 93A FEs Q62702-F1144 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 50 6 mW 300 150 - 65 ... + 150 - 65 ... + 150 240 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 78 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFP 93A Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-16-1996 BFP 93A Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 4.5 6 0.5 0.33 1.7 - GHz pF 0.8 dB 2 3.3 - IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 14.5 8.5 18 12 - IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-16-1996 BFP 93A SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 8.6752 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 20.011 1.5466 26.834 1.95 3.4649 3.1538 33.388 2.5184 0.72744 1.1061 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 137.63 0.33395 59 7.2326 1.0075 0.70393 0.28319 0 0.34565 0 0 0.75935 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.93633 2619.3 0.88761 0.70823 0.13193 0.5071 0.17765 1039.5 0.21422 0.75 1.11 300 fA fA V fF V eV K 0.015129 A 0.043806 mA All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.89 0.73 0.4 0.5 0 0.42 189 15 187 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-16-1996 BFP 93A Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 400 mW Ptot 300 250 TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/P totDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 TS -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-16-1996 BFP 93A Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.6 7 pF GHz 10V 3V Ccb 1.2 fT 5 1.0 4 0.8 3 0.6 2V 1V 0.7V 2 0.4 1 0 0 4 8 12 16 V VR 22 0 10 20 30 40 mA IC 60 0.2 0.0 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB 10V 3V 3V 2V dB 10V 5V 3V G 16 G 10 2V 14 8 12 1V 10 6 1V 4 8 0.7V 0 10 20 30 40 mA IC 60 2 0.7V 6 0 0 10 20 30 40 mA IC 60 Semiconductor Group 6 Dec-16-1996 BFP 93A Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 20 VCE = Parameter, f = 900MHz 32 IC=30mA dB 0.9GHz dBm 8V 5V G 16 0.9GHz 14 12 10 8 6 1.8GHz 1.8GHz IP3 24 2V 3V 20 16 1V 12 8 4 2 0 0 2 4 6 8 V 12 4 0 0 10 20 30 40 V CE mA IC 60 Power Gain Gma, Gms = f(f) VCE = Parameter 35 Power Gain |S21|2= f(f) VCE = Parameter 32 IC=30mA dB dB IC=30mA G 25 S21 24 20 20 16 12 8 15 10 10V 2V 1V 0.7V 4 0 -4 0.0 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Dec-16-1996 |
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